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2N4036
MEDIUM-SPEED SWITCH
DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and general purpose amplifier.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEX V CER V CEO V EBO IC IB Pt o t T s t g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 1.5 V) Collector-emitter Voltage (R BE 200 ) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Base Current Total Power Dissipation at T amb 25 C at T c as e 25 C Storage and Junction Temperature Value - 90 - 85 - 85 - 65 -6 -1 - 0.5 1 7 - 65 to 200 Unit V V V V V A A W W C 1/5
2N4036
THERMAL DATA
R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 25 175 C/W C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified)
Symbol I CBO I CEO I E BO V( BR)CB O V ( BR) CEX * V (BR)CE R * V (BR)CE O * V (B R)E BO V CE( sat )* VB E * h F E* Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (I B = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 1.5 V) Collector-emitter Breakdown Voltage (R BE = 200 ) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Voltage DC Current Gain Test Conditions V CB = - 60 V V CE = - 30 V V EB = - 5 V I C = - 100 A I C = - 10 mA I C = - 10 mA I C = - 10 mA I E = - 100 A I C = - 150 mA I C = - 150 mA I C = - 0.1 mA I C = - 150 mA I C = - 500 mA I C = - 50 mA f = 20 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = - 150 mA I B1 = - 15 mA I B = - 15 mA V CE = - 10 V V CE = - 10 V V CE = - 10 V V CE = - 10 V V CE = - 10 V 60 V E B = - 0.5 V 90 V CB = - 10 V 30 V CC = - 30V 110 ns 700 ns pF pF 20 40 20 - 90 - 85 - 85 - 65 -7 - 0.65 - 1.1 140 MHz Min. Typ. Max. - 20 - 0.5 - 20 Unit nA A nA V V V V V V V
fT C EBO C CBO t o n ** t o f f**
Transition Frequency Emitter-base Capacitance Collector-base Capacitance Turn-on Time Turn-off Time
I C = - 150 mA V CC = - 30 V I B1 = - I B2 = - 15 mA
* Pulsed : pulse duration = 300 s, duty cycle = 1 %. ** See test circuit.
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2N4036
Test Circuit for ton, toff.
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2N4036
TO39 MECHANICAL DATA
mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch
D G I H E F
A
L B
P008B
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2N4036
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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